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MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor

Categories	MOSFET Power Electronics
Brand Name:	onsemi
Model Number:	MGSF2N02ELT1G
Place of Origin:	original
MOQ:	1
Price:	Negotiable
Payment Terms:	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability:	999999
Delivery Time:	1-3 days
Packaging Details:	standard
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.5 nC @ 4 V

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Company Info.

Shenzhen Sai Collie Technology Co., Ltd.

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.5 nC @ 4 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 5 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

p-channel mosfet sot-23