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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Categories RF Transistors
Brand Name: Toshiba
Model Number: 2SA1943-O(Q)
Place of Origin: JP
MOQ: 1pcs
Price: Email us for details
Payment Terms: T/T, Western Union
Supply Ability: 5000
Delivery Time: 1day
Packaging Details: Tray
Description: 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Stock: 2000PCS
Date Code: Newest code
Shipping by: DHL/UPS/Fedex
Condition: New*Original
Warranty: 365days
Lead free: Rohs Compliant
Lead times: Immediately Shipment
Package: TO-3P-3
Mounting Style: Through Hole
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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole

Toshiba
Product Category:Bipolar Transistors - BJT
RoHS:Details
Through Hole
TO-3P-3
PNP
Single
230 V
230 V
5 V
1.5 V
15 A
150 W
30 MHz
-
+ 150 C
2SA
Tray
Brand:Toshiba
Continuous Collector Current:- 15 A
DC Collector/Base Gain hfe Min:55
DC Current Gain hFE Max:160
Height:26 mm
Length:20.5 mm
Product Type:BJTs - Bipolar Transistors
Subcategory:Transistors
Technology:Si
Width:5.2 mm
Unit Weight:0.238311 oz

Power Amplifier Applications

• High collector voltage: VCEO= −230 V (min)
• Complementary to 2SC5200
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.



Specifications

  • Manufacturer: Toshiba
  • Transistor Type: NPN
  • Package Type: TO-3PL
  • Maximum Power Dissipation: 150W
  • Collector Emitter Voltage (VCEO): 230V
  • Maximum Collector Current: 15A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Frequency: 30MHz
  • Mounting Type: Through Hole
  • Operating Temperature: 150°C TJ
  • Part Status: Obsolete




Quality 2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) for sale
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