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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Categories Power Mosfet Transistor
Brand Name: TOSHIBA
Model Number: TPC8111
Certification: Original Factory Pack
Place of Origin: Taiwan
MOQ: 5pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 580PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
VDSS: −30 V
VDGR: −30 V
VGSS: ±20 V
ID: −11 A
PD: 1.9 W
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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET


TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications


• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 23 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)


Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution


Maximum Ratings (Ta = 25°C)

CharacteristicsSymbolRatingUnit
Drain-source voltageVDSS−30V
Drain-gate voltage (RGS = 20 kΩ)VDGR−30V
Gate-source voltageVGSS±20V
Drain power dissipation (t = 10 s)PD1.9W
Drain power dissipation (t = 10 s)PD1.0W
Single pulse avalanche energyEAS31.5mJ
Avalanche currentIAR−11A
Repetitive avalanche energyEAR0.19mJ
Channel temperatureTch150°C


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