RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications

Description of RD06HVF1

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications

FEATURES of RD06HVF1

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION of RD06HVF1

For output stage of high power amplifiers in VHF band mobile radio sets.

Koben Electronics was founded in 1995 and is located in the Silicon Valley of China, Shenzhen. 

The mission of Koben has always been to provide quality electronics components to manufacturers worldwide. Early on we became a primary conduit for end-of-program and overstock inventory for major distributors such as Future Electronics and contract manufacturers as Flextronics. Koben has since then added sourcing of high quality components from local manufacturers in China.

Koben has always been customer driven rather than opportunity driven. Meaning- we will always choose path that is best for long term relationship with customer over short term view. It is why we have one of the highest customer retention scores of China based distributors.