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YJJ JSIR 350-4 MEMS Infrared Light Source Infrared Emitter For NDIR Gas Measurement

Categories Infrared Photoelectric Sensor
Brand Name: Micro-Hybrid
Model Number: JSIR 350-4
Place of Origin: Germany
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: Disk mounting
cannula: TO39
Additional device: Reflektor
Window/filter: Available
Filling gas: Ja
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YJJ JSIR 350-4 MEMS Infrared Light Source Infrared Emitter For NDIR Gas Measurement

Product Description:

JSIR 350-4 MEMS Infrared Light Source Infrared Emitter For NDIR Gas Measurement


Features:

The infrared emitter, with 4 chips on the TO8 connector, is used to measure gases with low concentration or low absorption characteristics. The version with a windowless reflector in the standard TO8 housing is also suitable for long measuring distances from 30 cm. This MEMS-based filament emitter counterpart has a significantly longer lifetime and less drift.


Unlike filament infrared sources, the JSIR 350 Quad emitter is modulated/pulseable and does not require an additional chopper.


High-performance nanoamorphous carbon diaphragms can achieve diaphragm temperatures of up to 850 °C for long-term stable radiation output. The JSIR 350 Quad IR transmitter is ideal for a variety of gas analysis applications in industrial aerospace and other demanding applications.


IR illuminators can be used with MTS thermopile detectors or MPS pyro detectors. The combination with a Micro-Hybrid IR detector ensures better performance when analyzing gas concentrations and ensures accurate measurement results.


Performance characteristics

Wide emissivity 2-15 µm

Membrane temperature up to 850 °C

High radiation output

High modulation frequency

Long life (reliability due to high membrane stability)

HermeSEAL technology is available

Technical parameter Open / window N2 Unit
Spectral output range 2 ... 15 μm
Active area 2.2 x 2.2 mm2
Hot resistant 1 40 ± 20 Ω
Temperature coefficient 2 typ. 500 ppm/K
Time constant 0-63 % typ. 12.5 ms
Nominal power consumption 3 650 mW
Operation voltage 4 typ. 4.9 V
Operation current 4 typ. 132 mA
Recommended driving mode Power mode
Active area temperature 1,5,6 610 ± 30 °C
Window
Available: Sapphire, BaF2, CaF2, Si ARC, other on
request
Housing TO39
Estimated lifetime 7,8 > 5 000 h at 740 °C
> 100 000 h at 610 °C
Absolute max. ratings
Input power 3,5 1 200 mW
Housing temperature 8 185 without window,
85 with window °C
Active area temperature 850 °C


Specifications:

Effective area [mm2]2.2 x 2.2
Energy consumptionNormal
Wide emissivity2-15 µm
Membrane temperature up to850 °C


Product Tags:

MEMS Infrared Light Source

  
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