High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses

Categories	Single IGBTs
Td(off):	226ns
Pd - Power Dissipation:	1kW
Td(on):	116ns
Collector-Emitter Breakdown Voltage (Vces):	1.2kV
Reverse Transfer Capacitance (Cres):	0.42nF
Input Capacitance(Cies):	10nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):	5V@4mA
Gate Charge(Qg):	275nC@15V
Reverse Recovery Time(trr):	180ns
Switching Energy(Eoff):	8.6mJ
Turn-On Energy (Eon):	7mJ
Description:	1kW 1.2kV Screw Terminals Single IGBTs RoHS
Mfr. Part #:	MG150HF12MIC2
Model Number:	MG150HF12MIC2
Package:	Screw Terminals

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Hefei Purple Horn E-Commerce Co., Ltd.

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Product Details
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High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses

Product Overview

The MG150HF12MIC2 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. This module offers fast switching and a short tail current, complemented by free-wheeling diodes with fast and soft reverse recovery. Ideal for welding machines, power supplies, and other industrial power applications.

Product Attributes

Brand: Yangjie
Model: MG150HF12MIC2
Certifications: RoHS Compliant
Document Revision: Rev.1.0
Date: 1-July-19

Technical Specifications

Description	Symbol	Values	Units	Conditions
Absolute Maximum Ratings				(TC = 25 unless otherwise specified)
Collector - Emitter Voltage	VCES	1200	V
Gate-Emitter Voltage	VGES	20	V
DC Collector Current	IC	210	A	TC=25
DC Collector Current	IC	150	A	TC=80
Repetitive Peak Collector Current	ICM	300	A	TC=25C, tp=1ms
Power Dissipation Per IGBT	Ptot	1000	W
Junction Temperature Range	TJ	-40 to +150	C
Storage Temperature Range	TSTG	-40 to +125	C
Insulation Test Voltage	Viso	3000	V	AC, t=1min
Mounting Torque Power Terminals		515%	N*m	Screw: M6
Mounting Torque Mounting Screw		515%	N*m	M6
Electrical Characteristics of IGBT				(TJ = 25 unless otherwise specified)
Collector-Emitter Breakdown Voltage	V(BR)CES	1200	V	VGE = 0V, IC=1mA
Collector Leakage Current	ICES	0.5	mA	VCE=1200V,VGE=0V, TJ=25C
Collector Leakage Current	ICES	1	mA	VCE=1200V, VGE=0V, TJ=125C
Gate Leakage Current	IGES	-200 to 200	nA	VCE=0V, VGE=20V
Gate - Emitter Threshold Voltage	VGE(th)	5.0 - 6.5	V	VCE=VGE, IC=4mA
Collector Emitter Saturation Voltage	VCE(sat)	1.9 - 2.1	V	IC=150A, VGE=15V, TJ=25C
Collector Emitter Saturation Voltage	VCE(sat)	2.0 - 2.3	V	IC=150A VGE=15V, TJ=125C
Input Capacitance	Cies	10	nF	VCE=25V, VGE=0V, f =1MHz
Reverse Transfer Capacitance	Cres	0.42	nF
Turn-on Delay Time	td(on)	116	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Rise Time	tr	31	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Turn-off Delay Time	td(off)	226	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Fall Time	Tf	185	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=25C Inductive Load
Turn-on Delay Time	td(on)	127	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Rise Time	tr	35	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Turn-off Delay Time	td(off)	305	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Fall Time	Tf	300	ns	VCC=600V, IC=150A RG =3.5,VGE=15V TJ=125C Inductive Load
Turn-on Switching Loss	Eon	7.0	mJ	VCC=600V, RG =3.5 IC=150A TJ=25C
Turn-on Switching Loss	Eon	9.9	mJ	VCC=600V, RG =3.5 IC=150A TJ=125C
Turn-off Switching Loss	Eoff	8.6	mJ	VCC=600V, RG =3.5 IC=150A TJ=25C
Turn-off Switching Loss	Eoff	14.6	mJ	VCC=600V, RG =3.5 IC=150A TJ=125C
Gate Charge	Qge	275	nC	VCC=600V,IC=150A, VGE=15V
Short Circuit Safe Operating Area	SCSOA	735	A	VCC = 600V, VGE = 15V, TJ = 125, 10 s
Electrical Characteristics of FWD				(TC = 25 unless otherwise specified)
Forward Voltage	VFM	1.72 - 1.9	V	IF=150A, VGE=0V; TJ=25C
Forward Voltage	VFM	1.82 - 2.0	V	TJ=125C
Reverse Recovery Time	trr	180	ns	IF=150A , VR=600V, diF/dt=-2960A/s VGE = -15V TJ=25C
Reverse Recovery Time	trr	359	ns	IF=150A , VR=600V, diF/dt=-2960A/s VGE = -15V TJ=125C
Peak Reverse Recovery Current	Irr	110	A	TJ=25C
Peak Reverse Recovery Current	Irr	120	A	TJ=125C
Reverse Recovery Charge	Qrr	8.3	mJ	TJ=25C
Reverse Recovery Charge	Qrr	15.9	mJ	TJ=125C
Thermal Resistance Characteristics
Junction-To-Case (IGBT Part, Per Leg)	RJC	0.1	/W
Junction-To-Case (Diode Part, Per Leg)	RJC	0.27	/W
Case-To-Sink (Conductive Grease Applied)	RCS	0.1	/W
Power Terminals Torque	Mt	3 - 5	Nm	Screw:M6
Mounting Screw Torque	Ms	3 - 5	Nm	M6
Weight Of Module	Weight	300	g

2410121308_YANGJIE-MG150HF12MIC2_C781186.pdf

High current IGBT module YANGJIE MG150HF12MIC2 with positive temperature coefficient and low switching losses

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