3inch InP Indium Phosphide Substrate N-Type Semiconductor VGF Growth Method 111 100 Orientation
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3inch InP Indium Phosphide Substrate N-Type Semiconductor VGF growth method 000 001 orientation Product abstract Our InP (Indium Phosphide) products offer high-performance solutions for a variety of applications in the telecommunications, optoelectronics......
SHANGHAI FAMOUS TRADE CO.,LTD
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P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade
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...Indium Phosphide) Substrate , 3”, Dummy Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates
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... wafer GaAs Wafers GaAs Substrate Wafers GaAS substrate wafers GaAS is a semiconductor material with superior properties of high frequency, high electron migration, high electron performance, low ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Mechanical Grade Technical Ceramic Parts InP Wafer Indium Phosphide
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...Indium phosphide ) We provides high quality single crystal InP wafer ( Indium phosphide ) to micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 3 inch . Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
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