dynamic random access memory ic

Place of Origin:CN

Brand Name:Original Factory

Model Number:K4UCE3Q4AA-MGCR

Memory IC Chip K4UCE3Q4AA-MGCR 64Gbit Dynamic Random Memory IC For Mobile Devices [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:K3UH7H70AM-JGCL

Memory IC Chip K3UH7H70AM-JGCL 64Gbit LPDDR4X Dynamic Random Memory IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:K3UH5H50AM-AGCL

Memory IC Chip K3UH5H50AM-AGCL 32Gbit LPDDR4X Dynamic Random Memory IC FBGA-556 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:K4UCE3Q4AA-MGCL

Memory IC Chip K4UCE3Q4AA-MGCL 64Gbit LPDDR4X Dynamic Random Memory FBGA-200 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:K4U8E3S4AD-GFCL

Memory IC Chip K4U8E3S4AD-GFCL 8Gbit LPDDR4X Dynamic Random Memory FBGA-200 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Original Factory

Model Number:MT41K512M16VRN-107 IT:P

Place of Origin:CN

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ...

Brand Name:Original Factory

Model Number:S29GL01GS10FHI010

Place of Origin:CN

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one

Brand Name:Original Factory

Model Number:S70GL02GT12FHIV10

Place of Origin:CN

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory...

Brand Name:Original Factory

Model Number:S70GL02GS11FHI010

Place of Origin:CN

... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation,

Brand Name:Original Factory

Model Number:CY15B104QI-20LPXC

Place of Origin:CN

4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification...

Brand Name:Original Factory

Model Number:S29GL256S90DHI020

Place of Origin:CN

...Memory IC FBGA64​ Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. Specification Of S29GL256S90DHI020 Part Number S29GL256S90DHI020 Memory Type Non-Volatile Memory...

Brand Name:Original Factory

Model Number:S29GL256S10DHB023

Place of Origin:CN

... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, ...

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:original

Model Number:FM1608-120

Place of Origin:Original Factory

... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ...

Brand Name:original

Model Number:FM24C256-SE

Place of Origin:original

... - 256KB FRAM SERIAL MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs ...

Brand Name:Original Factory

Model Number:MT25QU01GBBB8E12-0SIT

Place of Origin:CN

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR increases the maximum bandwidth rate to 166MB/s. Specification Of MT25QU01GBBB8E12-0SIT Part Number: MT25QU01GBBB8E12-0SIT VCC: 2.7–3.6V Page Access: 20ns Random Access...

Place of Origin:PHILIPPINE

Brand Name:Samsung semiconductor

Model Number:K6R4008C1D-KI10

... at Commercial and Industrial Temperature Ranges. Description: The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable ...

Brand Name:Original Factory

Model Number:MT25QL02GCBB8E12-0AAT

Place of Origin:CN

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequency: 133 MHz Organisation: 256 M x 8 Features Of

Brand Name:Original Factory

Model Number:S80KS5122GABHI020

Place of Origin:CN

...DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS5122GABHI020 Part Number: S80KS5122GABHI020 Wrapped Burst Lengths: 64 Bytes (32 Clocks) Linear Burst: 64 Mb Technology: PSRAM (Pseudo SRAM) Access Time: 35 Ns Operating Temperature Range -

Brand Name:Original Factory

Model Number:S80KS2562GABHI020

Place of Origin:CN

..., 1.8 V Industrial (85°C) HyperBus HYPERRAM Gen 2.0 in 24-FBGA. Specification Of S80KS2562GABHI020 Part Number: S80KS2562GABHI020 Clock Frequency: 200 MHz Access Time: 35 Ns Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1