random access memory ram

Brand Name:CYPRESS

Model Number:FM16W08-SGTR

Place of Origin:Multi-origin

... Random Access Memory (SRAM) in space-saving 8-pin plastic SOP package with an access time of 15ns. Features: • Low power consumption • Wide voltage range: 1.8V to 3.6V • High performance: 15ns access time • Low cost • 1Mbit capacity • 8-...

Brand Name:CYPRESS

Model Number:CY62167EV30LL-45BVXI

Place of Origin:original

...: Memory Function: SRAM (Static Random Access Memory) Interface: Serial/Parallel Data Width: 32-bit Organization: 16K x 32 Speed: 45 MHz Mounting Type: ...

Categories:PLC Spare Parts

Country/Region:china

... Function Common Memory Module Memory Capacity 128K Memory Memory Type Typically static random-access memory (SRAM) The Reliance Electric 57C423 Common Memory Module with 128K Memory is versatile and finds application in various industrial automation and

Brand Name:Macronix

Model Number:MX29LV640EBTI-70G

Place of Origin:Mult-origin

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 33MHz - Low power consumption - High speed random access...

Brand Name:Original Factory

Model Number:MT25QU01GBBB8E12-0SIT

Place of Origin:CN

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR increases the maximum bandwidth rate to 166MB/s. Specification Of MT25QU01GBBB8E12-0SIT Part Number: MT25QU01GBBB8E12-0SIT VCC: 2.7–3.6V Page Access: 20ns Random Access...

Brand Name:CYPRESS

Model Number:FM25V01A-GTR

Place of Origin:original

... - High Performance Memory Chip Capacity Product Listing: Product Name: FM25V01A-GTR Integrated Circuit IC Chip Product Features: - Low-power serial F-RAM nonvolatile memory - 256 Kbit (32 Kbyte) of nonvolatile memory - Fast random read access: 20 ns - Low...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1071DV33-12BAXI

Place of Origin:original

...Memory Chips 48-TFBGA Package Static RAM high performance CMOS Static RAM 32Mbit Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 12ns Access...

Place of Origin:PHILIPPINE

Brand Name:Qimonda AG

Model Number:HYB25DC512160DE-5

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate ...

Brand Name:Anterwell

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Original Factory

Model Number:MT53E768M32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-powered applications. LPDDR4 memory...

Brand Name:Macronix

Model Number:MX30LF1G08AA-TI

Place of Origin:original

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a write endurance of up to 100K cycles. The

Brand Name:Original Factory

Model Number:MT53E2G32D4DT-046 WT:A

Place of Origin:CN

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of

Brand Name:Original Factory

Model Number:MT53E768M64D4HJ-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device. Optimized to address power consumption in battery-powered applications, this memory...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-053 RS WT:C

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. These memory...

Place of Origin:PHILIPPINE

Brand Name:SPANSION

Model Number:S29GL512P12TFIV20

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access...

Brand Name:Infineon / CYPRESS

Model Number:FM28V020-SG

Place of Origin:original

...Memory Chips 28-SOIC Package F-RAM Memory Advanced High Reliability​ Memory Type Non-Volatile Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 256Kbit Memory Organization 32K x 8 Memory Interface Parallel Write Cycle Time - Word, Page 140ns Access...

Brand Name:Original Factory

Model Number:MT25QL02GCBB8E12-0AAT

Place of Origin:CN

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequency: 133 MHz Organisation: 256 M x 8 Features Of

Brand Name:Anterwell

Model Number:A623308M-70SF

Place of Origin:original factory

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three

Brand Name:Original Factory

Model Number:MT41K512M16VRN-107 IT:P

Place of Origin:CN

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ...