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All random access memory wholesalers & random access memory manufacturers come from members. We doesn't provide random access memory products or service, please contact them directly and verify their companies info carefully.
Total 2020 products from random access memory Manufactures & Suppliers |
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Brand Name:Original Factory Model Number:MT40A1G16KD-062E IT:E Place of Origin:CN ... DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E IT:E Part Number MT40A1G16KD-062E IT:E Memory Interface Parallel Clock Frequency 1.6 GHz Write Cycle Time - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E256M32D2DS-053 WT:B Place of Origin:CN Memory IC Chip MT53E256M32D2DS-053 WT:B 8Gbit SDRAM-Mobile LPDDR4 Memory Chips Product Description Of MT53E256M32D2DS-053 WT:B MT53E256M32D2DS-053 WT:B is 8Gbit SDRAM-Mobile LPDDR4 Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:CYPRESS Model Number:FM24CL04B Place of Origin:Original Factory ... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Original Factory Model Number:MT40A1G16KD-062E:E Place of Origin:CN ...random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E512M32D1ZW-046 AIT:B Place of Origin:CN ... configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT53E512M32D1ZW-046 AIT:B Part Number: MT53E512M32D1ZW-046 AIT:B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Micron Technology Inc. Model Number:MT46V16M16P-5B:M Place of Origin:original ... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Original Factory Model Number:H9HCNNNBKUMLHR-NMOR Place of Origin:CN H9HCNNNBKUMLHR-NMOR Memory IC Chip 2Gbit DRAM LPDDR4 Memory IC FBGA-200 Product Description Of H9HCNNNBKUMLHR-NMOR H9HCNNNBKUMLHR-NMOR is LPDDR4 Dynamic Random Access Memory IC, 2GB Capacity, x16 Architecture, the package is FBGA-200. Specification... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Anterwell Model Number:A623308M-70SF Place of Origin:original factory ...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power supply. Inputs and three |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Original Factory Model Number:S70GL02GT12FHIV10 Place of Origin:CN ...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:S70GL02GS11FHI010 Place of Origin:CN ... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Hynix Model Number:Hynix Memory IC Place of Origin:South Korea, China ...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ... |
Shenzhen E-Top Semiconductor equipment Co., Ltd
Guangdong |
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Brand Name:Micron Model Number:Micron Memory IC Place of Origin:United States Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It... |
Shenzhen E-Top Semiconductor equipment Co., Ltd
Guangdong |
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Brand Name:original Model Number:FM1608-120 Place of Origin:Original Factory ... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:original Model Number:FM24C256-SE Place of Origin:original ... - 256KB FRAM SERIAL MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs ... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Original Factory Model Number:MT40A512M16LY-062E AUT:E Place of Origin:CN 8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip Product Description Of MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT40A1G16KH-062E AIT:E Place of Origin:CN ... Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:CY15B104QI-20LPXC Place of Origin:CN 4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:S29GL256S90DHI020 Place of Origin:CN ...Memory IC FBGA64 Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. Specification Of S29GL256S90DHI020 Part Number S29GL256S90DHI020 Memory Type Non-Volatile Memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Microchip Technology Model Number:AT24CS08-STUM-T Place of Origin:original ...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interface and is capable of storing up to 1024 bytes of data. The device is organized as 128 pages of 8 bytes each and can be accessed using the device’s random access... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Original Factory Model Number:S29GL256S10DHB023 Place of Origin:CN ... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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